Micromaterials and Interfaces

A review of transforming neuromorphic computing with 2D material memtransistors

P. R. Sekhar Reddy

Semiconductor Laboratory (SEMICON-LAB), SASTRA-MHI Training Center, SASTRA Deemed to be University

DOI: https://doi.org/10.59429/mi.v2i1.6377

Keywords: 2D materials; memtransistor; synaptic devices; CMOS technology; neuromorphic computing and artificial intelligence

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Abstract

In the pursuit of advancing neuromorphic computing, 2D material-based memtransistors have emerged as a promising avenue. These memtransistors offer a unique blend of attributes, including tiny dimensions, compactness, and low-power operation, making them ideal candidates to mimic human brain functionality for artificial intelligence applications. This review focuses on various 2D materials such as MoS₂, WSe₂, h-BN, and In₂Se₃, and their suitability for bio-synapse applications, highlighting their advantages over other synaptic devices. Additionally, the review suggests the development of multi-terminal memtransistor-based synaptic devices with innovative operational principles for in-memory computing applications. Finally, concludes by discussing both the current state of development and the prospects and challenges that lie ahead, aiming to inspire further progress in information storage and neuromorphic computing.

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