Research and implementation of multi-channel arbitrary wave signal synchronous measurement technology
Zhizhong Zhu
Institute of Microelectronics, Chinese Academy of Sciences
DOI: https://doi.org/10.59429/esta.v12i2.10554
Keywords: β-Gao/SiC heterojunction; Multi-channel arbitrary wave signal synchronous measurement technology; Active voltage clamping technology; Wide band gap semiconductor detection1
Abstract
In this study, a high-voltage pulse generator and a multifunctional waveform generator based on lateral heterojunction structure are designed to meet the requirements of fast switching and frequency domain correction in high-frequency signal processing of wide-band gap semiconductors. The system adopts N-type β-gallium oxide /p-type silicon carbide lateral heterojunction device, which realizes ultra-high-speed switching under the peak voltage of 800V and has the characteristics of low on-resistance. The digital programmable gate drive module based on PLL synchronization dynamically adjusts polynomial coefficients through FPGA to compensate the nonlinear transmission deviation of transistors; The measuring unit combines high-speed ADC and Wiener filtering algorithm to correct amplitude-frequency distortion in 10GHz bandwidth and ensure waveform synthesis accuracy. The system integrates Jacobian matrix control strategy and active voltage clamping technology, and connects the traditional module structure in series to maintain the dynamic stability of high-speed conversion. The two-dimensional electron gas channel formed by heterojunction polarization effect significantly optimizes the switching performance, which is verified by synchronous pulse excitation mechanism and real-time DSP analysis. The scalable waveform generation scheme proposed in this paper provides accurate waveform support for semiconductor detection, especially suitable for the application scenarios of high voltage and high frequency wide band gap devices.
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