Application and Performance Analysis of Silicon Carbide Pow_x005fer Electronic Devices in Power Systems
Abstract
As a new wide-band semiconductor material emerging in recent years, Silicon carbide has the advantages of high voltage resist_x005fance, high temperature resistance, high power, high breakdown field strength and high thermal conductivity. This paper looks forward to the current status and future development of its application in power system, and its rapid development will bring great influence to the power system. Based on the booming development of silicon carbide materials, it can provide an insight into the possible future development trend of power electronic devices.
References
[1] QIAN Lighting, ZHANG Junming, SHENG Zheng. Current status and development of power electronic devices and their applications[J]. Chinese Journal of Electrical Engineering.2014.29(34):5149-5151.
[2] Liu Zehong. Innovative practice of ±1100kV ultra-high voltage DC transmission project[J]. Chinese Journal of Electrical Engineer_x005fing.2020.23(40):7782-7784.
[3] LIU Baolong, CHA Yabing. Solid-state transformer, a key device for future energy interconnection[J]. National Defense Science
and Technology.2014.3(35):11-13.
[4] Sheng F, Guo Q, Zhang JM, Qian L. Lighting. Prospect of silicon carbide power electronics in power systems.2012.30(32):1-4.
