Research on the design and fabrication of GaNHemt devices with improved high-frequency performance
Pengbo Liu
School of Integrated Circuits, Jiangnan University
DOI: https://doi.org/10.59429/esta.v11i3.7335
Keywords: GaN HEMT; High-frequency performance; Structural design
Abstract
This study focuses on the design and manufacturing methods of GaN HEMT devices in terms of highfrequency performance improvement, and discusses the comprehensive testing, analysis, structural design, and optimization of the manufacturing process of the device. The static, dynamic and reliability tests and analysis of the performance of the device were carried out, and the material selection, epitaxial structure, gate and sourcedrain structure of the device were optimized to improve the effect of thermal management. The high-frequency performance and reliability of the device are further enhanced by means of epitaxial growth, device processing and packaging process optimization. This research provides key technical and theoretical support for the design and production of high-frequency GaN HEMT devices, with the main goal of promoting the efficient and stable application of GaN HEMT devices.
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