Study on the influence of silicon carbide JBS active region structure on device performance
Yili Xu
Hangzhou Spectrum Semiconductor Co., Ltd.
LI Xin
Hangzhou Spectrum Semiconductor Co., Ltd.
Xiaodong Yin
Hangzhou Spectrum Semiconductor Co., Ltd.
Guowei Zhang
Hangzhou Spectrum Semiconductor Co., Ltd.
Jingyi LI
Hangzhou Spectrum Semiconductor Co., Ltd.
Qianqian Liu
Institute of Microelectronics of the Chinese Academy of Sciences
DOI: https://doi.org/10.59429/esta.v11i4.8466
Keywords: Silicon carbide Schottky diode JBS; Active area
Abstract
The silicon carbide JBS active region is a key component in modern semiconductor devices, and its definition and structure are crucial to understanding the device performance. The silicon carbide SBD active region enables efficient current transmission and thermal management through precise control of the metalsemiconductor interface. The JBS diode combines the advantages of SBD and PiN diode, with low passon pressure drop characteristics and high blocking capability. To verify silicon carbide JBS diode active area structure on the influence of electrical, by changing the structure of source area short contact, to verify the positive guide and reverse blocking characteristics change, experimental validation and test results show that with the increase of the contact area is guide through the current density is bigger, the resistance is smaller, but the reverse leakage current also increases, vice versa. The structure of silicon carbide JBS active region has a significant and positive influence on the device performance, which provides an important reference for the application of silicon carbide JBS active region.
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