Research on the dome angle of polysilicon gate
Yili Xu
Hangzhou Spectrum Semiconductor Co., Ltd.
LI Xin
Hangzhou Spectrum Semiconductor Co., Ltd.
Xiaodong Yin
Hangzhou Spectrum Semiconductor Co., Ltd.
Guowei Zhang
Hangzhou Spectrum Semiconductor Co., Ltd.
Jingyi LI
Hangzhou Spectrum Semiconductor Co., Ltd.
Qianqian Liu
Institute of Microelectronics of the Chinese Academy of Sciences
DOI: https://doi.org/10.59429/esta.v11i4.8467
Keywords: Silicon carbide MOSFET; Polysilicon; Dome Angle; Reliability
Abstract
In this paper puts forward a kind of polysilicon gate dome Angle manufacturing method, the polysilicon gate top Angle etching corners, avoid the silicon carbide MOSFET switch process, the polysilicon gate top electric field concentration, successfully solved the current silicon carbide power MOSFET industry in the polycrystalline top Angle of reliability problems and hidden trouble. This method is simple, effective, feasible and has obvious advantages, with high process tolerance, which can provide guarantee for the products working under extreme conditions.
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