Study on the voltage withstand design of 4H-SiC schottky barrier diode terminal area
Yili XU
Hangzhou Spectrum Semiconductor Co., Ltd
Guowei Zhang
Hangzhou Spectrum Semiconductor Co., Ltd
Jingyi Li
Hangzhou Spectrum Semiconductor Co., Ltd
Qianqian Liu
Institute of Microelectronics of the Chinese Academy of Sciences
DOI: https://doi.org/10.59429/esta.v11i4.8471
Keywords: Silicon carbide; Diode; Terminal structure
Abstract
This study successfully designed a 4H-SiC Schottky diode. To understand the performance of the device, the forward and reverse breakdown characteristics by changing its terminal structure. By comparing the device performance under different terminal structures, a new terminal design method is found, and its experimental results successfully verify the effectiveness of this design. It is shown that the dense to sparse fieldlimiting loop structure arranged from the main junction is better than that in the terminal design. At the same time, the positive guide pass feature is almost unaffected in the terminal injection structure. This study provides a new idea for the design of the device terminals.
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