Application of high temperature semiconductor material silicon carbide in MEMS
Yili Xu
Hangzhou spectrum Semiconductor Technology Co., LTD
DOI: https://doi.org/10.59429/esta.v11i4.8475
Keywords: High temperature semiconductor materials; Silicon carbide; Mems; Apply
Abstract
Silicon carbide high thermal conductivity, high breakdown voltage and other characteristics are significant, not only can promote the device power density and reliability improvement, but also to ensure that the production of power electronic devices to strengthen the voltage resistance, enhance the stability of the system. Because of this material property, we have found in practice that silicon carbide is not only used to manufacture power devices, but also can play a significant role in the field of micro-electromechanical. In order to solve the problems of thermal expansion and corrosion of traditional silicon-based sensors, researchers are strengthening the use of silicon carbide. This paper focuses on the high temperature semiconductor material silicon carbide, combined with the characteristics of silicon carbide, and focuses on the analysis of its application in MEMS.
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