The discussion on the interface characteristics and control mechanisms of high-mobility semiconductor materials
Hongyu Yao
Qilu University of Technology
Yang Li
Yantai University
Yuanjia Guo
Tianjin University of Science and Technology
Chao Su
Anqing Vocational and Technical College
Zijuan Liang
Tianjin University of Science and Technology
DOI: https://doi.org/10.59429/esta.v11i4.8486
Keywords: High-mobility semiconductor; Interface characteristics; Control mechanisms; Electric field control
Abstract
High-mobility semiconductor materials are of significant importance in modern electronic devices, but their interface characteristics have a substantial impact on overall performance. This paper discusses the interface characteristics and control mechanisms of high-mobility semiconductor materials, systematically explaining the factors influencing material mobility through the analysis of different material structures, physical and chemical control methods, and the impact of process optimization on interface properties. Research results indicate that rational electric field control, chemical doping, and process treatment can effectively improve interface quality, thereby enhancing device performance. The conclusion points out that optimizing interface characteristics is key to improving the application prospects of high-mobility semiconductor materials.
References
[1] Yao Mingjia, Ji Jialin, Li Xin, et al. MatHub-2d: A two-dimensional material transport database and its application in high-throughput screening of high-mobility two-dimensional semiconductor materials [J]. Scientia Sinica: Materials (English Edition), 2023, 66(7):2768-2776.
[2] Zhang Fengyuan, Hu Benlin, Li Runwei. Intrinsic elastic semiconductor materials based on imide block copolymers and their preparation methods: CN202211322409.6 [P]. CN115894832A [2024-10-06].
[3] Yu Mengshi, Tan Congwei, Gao Xiaoyin, et al. Chemical vapor deposition growth of high-mobility twodimensional semiconductor Bi_(2)O_(2)Se: Controllable growth and material quality [J]. Acta PhysicoChimica Sinica, 2023, 39(10):75-89.
[4] Wu Fuming, Liu Yixuan, Zhang Jun, et al. High-stretchable high-mobility semiconductor nanofiber composite films applied to fully stretchable organic transistors [J]. Scientia Sinica: Materials (English Edition), 2023, 66(5):1891-1898.
[5] Luo Weike, Li Zhonghui, Li Chuanhao, et al. Growth and characteristics of high-mobility AlN/GaN/AlN double heterojunction materials [J]. Research and Progress of Solid State Electronics, 2023, 43(2):191-196.