Application of square P + structures in silicon carbide JBS
Yili Xu
Hangzhou Spectrum Semiconductor Co., Ltd.
Xin Li
Hangzhou Spectrum Semiconductor Co., Ltd.
Xiaodong Yin
Hangzhou Spectrum Semiconductor Co., Ltd.
Guowei Zhang
Hangzhou Spectrum Semiconductor Co., Ltd.
Jingyi LI
Hangzhou Spectrum Semiconductor Co., Ltd.
Qianqian Liu
nstitute of Microelectronics of the Chinese Academy of Sciences
DOI: https://doi.org/10.59429/pest.v6i4.8435
Keywords: Silicon carbide; JBS; Forward and negative direction characteristics
Abstract
In this study, the structure of P + doping zone of silicon carbon (SiC) (junction barrier Schottky diode, JBS). The above two SiC JBS structures were tested, and the forward and backward characteristics were analyzed and compared. As a result, the square structure is 17.67% less resistant than the bar structure. In short, bar diodes perform better in reverse ability, while square diodes have more advantages in positive guide ability. The results provide an important basis for the optimized design and application of silicon carbide devices.
References
[1] Pomp, Ren Na, Xu Hongyi. Overview and prospect of silicon carbide power devices [J]. Chinese Journal of Electrical Engineering, 2020,40(06):1741-1753.DOI:10.13334/j.0258-8013.pcsee.191728.
[2] Zhang Bo, Deng Xiaochuan, Chen Wanjun, Li Zhaoji. Wide-band-power semiconductor device technology [J]. Journal of University of Electronic Science and Technology, 2009,38 (5): 618-623
[3] Zhang Xiuling. Preparation and properties of silicon carbide / graphene composites [D]. Northern University for Nationalities, 2023.
[4] Rao Chengyuan. Research on the new junction terminal technology of high-voltage 4H-SiC JBS diode [D]. University of Electronic Science and Technology, 2013.
[5] Zhang Chengcheng, Hao Yue, Zhao Tianxu, Wang Jianping. SiC New semiconductor devices and their applications [J]. Journal of Xidian University, 2002,29 (2): 157-162
[6] Chen Hongbo. Characteristics of the 4H-SiC npn bipolar transistors [D]. Xidian University, 2007.
[7] Zhang Yourun. Study on the new structures and characteristics of 4H-SiC BJT power devices [D]. University of Electronic Science and Technology, 2010.
[8] Yang Shuai, Zhang Xiaodong, Cao An, Luo Wenyu, Zhang Guanglei, Bloomberg, Zhao Jinjin. An ultrahigh pressure 4H-SiC hybrid PiN Schottky diode with a 3 D p-type buried layer [J]. Journal of Central South University,2021,28(12):3694-3704
[9] Rao Chengyuan. Research on the new junction terminal technology of high-voltage 4H-SiC JBS diode [D]. University of Electronic Science and Technology, 2013.
[10] Konstantinov A, Wahab Q, Nordell N, et al. Ionization rates and critical fields in 4H silicon carbide[J]. Applied Physics Letters, 1997, 71(1): 90-92