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ISSN

2661-3948(Online)

Article Processing Charges (APCs)

US$800

Publication Frequency

Quarterly

PDF

Published

2025-01-02

Issue

Vol 6 No 4 (2024): Published

Section

Articles

Application of square P + structures in silicon carbide JBS

Yili Xu

Hangzhou Spectrum Semiconductor Co., Ltd.

Xin Li

Hangzhou Spectrum Semiconductor Co., Ltd.

Xiaodong Yin

Hangzhou Spectrum Semiconductor Co., Ltd.

Guowei Zhang

Hangzhou Spectrum Semiconductor Co., Ltd.

Jingyi LI

Hangzhou Spectrum Semiconductor Co., Ltd.

Qianqian Liu

nstitute of Microelectronics of the Chinese Academy of Sciences


DOI: https://doi.org/10.59429/pest.v6i4.8435


Keywords: Silicon carbide; JBS; Forward and negative direction characteristics


Abstract

In this study, the structure of P + doping zone of silicon carbon (SiC) (junction barrier Schottky diode, JBS). The above two SiC JBS structures were tested, and the forward and backward characteristics were analyzed and compared. As a result, the square structure is 17.67% less resistant than the bar structure. In short, bar diodes perform better in reverse ability, while square diodes have more advantages in positive guide ability. The results provide an important basis for the optimized design and application of silicon carbide devices.


References

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[9] Rao Chengyuan. Research on the new junction terminal technology of high-voltage 4H-SiC JBS diode [D]. University of Electronic Science and Technology, 2013.

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