by Yili Xu, Xin Li, Xiaodong Yin, Guowei Zhang, Jingyi LI, Qianqian Liu
2024,6(4);
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Abstract
Power semiconductor devices are very important in modern power electronics technology, especially
in the field of low power consumption and high efficiency. With the development of technology, the demand for
high-voltage, high-frequency and high-efficiency semiconductor devices is growing, which provides support for
the development of new energy, smart grid, energy storage, automotive and other fields. At present, the power
devices on the market mainly use the VDMOSFET and UMOSFET two structures. UMOSFET Due to the
difficulty of manufacturing the U slot, many manufacturers abandon development and optimize VDMOSFET
instead. The development and optimization of silicon carbide VDMOSFET mainly focuses on improving the
device performance. This paper proposes a new method of source U groove VDMOSFET structure, by increasing
in the original manufacturing process of the U groove etching, different from UMOSFET morphology of the U
groove, greatly reduces the U groove erosion difficulty, and sub-trench defects do not affect the final performance
of the device, and can reduce the cell size of the device, improve the current density, provide new ideas for device
development.
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