Studies on the structure of the U-groove vdmosfet devices
Yili Xu
Hangzhou Spectrum Semiconductor Co., Ltd.
Xin Li
Hangzhou Spectrum Semiconductor Co., Ltd.
Xiaodong Yin
Hangzhou Spectrum Semiconductor Co., Ltd.
Guowei Zhang
Hangzhou Spectrum Semiconductor Co., Ltd.
Jingyi LI
Hangzhou Spectrum Semiconductor Co., Ltd.
Qianqian Liu
Institute of Microelectronics of the Chinese Academy of Sciences
DOI: https://doi.org/10.59429/pest.v6i4.8436
Keywords: Silicon carbide; Diode; Terminal structure
Abstract
Power semiconductor devices are very important in modern power electronics technology, especially in the field of low power consumption and high efficiency. With the development of technology, the demand for high-voltage, high-frequency and high-efficiency semiconductor devices is growing, which provides support for the development of new energy, smart grid, energy storage, automotive and other fields. At present, the power devices on the market mainly use the VDMOSFET and UMOSFET two structures. UMOSFET Due to the difficulty of manufacturing the U slot, many manufacturers abandon development and optimize VDMOSFET instead. The development and optimization of silicon carbide VDMOSFET mainly focuses on improving the device performance. This paper proposes a new method of source U groove VDMOSFET structure, by increasing in the original manufacturing process of the U groove etching, different from UMOSFET morphology of the U groove, greatly reduces the U groove erosion difficulty, and sub-trench defects do not affect the final performance of the device, and can reduce the cell size of the device, improve the current density, provide new ideas for device development.
References
[1] Qiao Ming, Yuan Liu. Development of power-integrated devices and their compatible technologies [J]. Electronics and Packaging, 2021,21 (4): 75-90.
[2] Talk about the power. An electrical reliability study of the 1200 V 4H-SiC MOSFET [D]. Jiangnan University, 2023.
[3] Luo Yiqi. New battles and new battlefields of silicon carbide [N]. 21st Century Business Herald, 2024-06-28 (011).
[4] Wei Shigong, Huai Yongjin. Application and development trend of silicon carbide power devices [J]. Micro-nano Electronics and Intelligent Manufacturing, 2023,5 (01): 44-48.
[5] The household golden leopard. Device design and key process study of 4H-SiC UMOS [D]. University of Electronic Science and Technology, 2015.
[6] Li Xuan. SiC MOSFET Switching loss model and new structure study [D]. University of Electronic Science and Technology, 2017.
[7] He Yanjing 11. High-performance 4H-SiC power VDMOSFET device design and key process study [D]. Xidian University, 2018.
[8] Lee rookie. SiC MOSFET Research and application [D]. Beijing Jiaotong University, 2016.